VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
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Vishay Semiconductors
Revision: 25-Jun-12
2
Document Number: 94010
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TC
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF
= 1 A, dI
F/dt = 50 A/μs, VR
= 30 V - - 35
ns
-31-
IF
= 1 A, dI
F/dt = 100 A/μs, VR
= 30 V - - 30
TJ
= 25 °C
= 25 °C - 2.4 -
IF
= 10 A
dIF/dt = 200 A/μs
= 125 °C - 5.6 -
VR
= 200 V
TJ
= 125 °C - 42 -
Peak recovery current IRRM
TJ
A
TJ
Reverse recovery charge Qrr
TJ
= 25 °C - 36 -
nC
TJ
= 125 °C - 120 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDTIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 65 - 175 °C
Thermal resistance,
junction to case
per diode
R
(FULL-PAK) per diode - - 3.9thJC
Mounting surface, flat, smooth
and greased
--1.5
°C/W
Marking device
Case style TO-220AB 20CTH03
Case style TO-220 FULL-PAK 20CTH03FP
1
10
100
0.4
0.6 20.8
1
1.2
1.4
1.6
1.8
VF
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
TJ
= 175 °C
TJ
= 125 °C
TJ
= 25 °C
0.01
0.1
1
10
100
50 100 200 250 300150
0.001
VR
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
TJ
= 175 °C
TJ
= 150 °C
TJ = 125 °C
TJ
= 100 °C
TJ
= 25 °C
TJ
= 50 °C
TJ
= 75 °C
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